Transition-metal-oxide based functional thin-film device using leakage-free electrolyte

Takayoshi KATASE, Hiromichi OHTA
2017 Journal of the Ceramic Society of Japan  
Using the flexible valence states of transition-metal-oxides (TMOs), the optical, electronic, and magnetic properties can be simultaneously controlled by electrochemical oxidation and reduction. Herein we review our recent works on the electrochemically switchable functional thin-film device, which has a three-terminal thin-film-transistor (TFT) structure with the TMO as an active channel layer and the liquid-leakage-free electrolyte as a gate insulator. Thin films of vanadium dioxide, tungsten
more » ... trioxide, and strontium cobaltite were selected as the channel layer. By applying the gate voltage at room temperature in air, the protonation/ deprotonation or oxidation/deoxidation occurs in the TMO channels and their opto-electronic and electro-magnetic properties are reversibly switched by using the mobile ions in the solid TFT structure. The present device with liquid-leakage-free electrolyte provides a novel design concept for the development of future multifunctional switching devices based on TMOs.
doi:10.2109/jcersj2.17098 fatcat:opw2vols7vcknmzqrbdhm3ah6m