Dry etching of polycarbonate using O2/SF6, O2/N2and O2/CH4plasmas
O2/SF6, O2/N2와 O2/CH4플라즈마를 이용한 폴리카보네이트 건식 식각

Y.W. Joo, Y.H. Park, H.S. Noh, J.K. Kim, S.H. Lee, G.S. Cho, H.J. Song, M.H. Jeon, J.W. Lee
2008 Applied Science and Convergence Technology  
doi:10.5757/jkvs.2008.17.1.016 fatcat:mafnt3wk2baifdx6shzdflrmnm