Nucleation of atomic-layer-deposited HfO2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation

M. L. Green, A. J. Allen, X. Li, J. Wang, J. Ilavsky, A. Delabie, R. L. Puurunen, B. Brijs
2006 Applied Physics Letters  
We report the results of grazing incidence small angle x-ray scattering experiments on the nucleation and growth of atomic layer deposited HfO 2 films. The scattering features are internal ͑porosity͒ and external ͑roughness͒ surfaces. Films grown on H-terminated Si exhibit greater scattering than films grown on chemically oxidized Si. The films grown on H-terminated Si may be as much as 50% porous. Characteristic scattering feature sizes are those of the film nuclei, about 2 nm, which then
more » ... sce and become inherited features of the films. Films grown on chemically oxidized Si are observed to coalesce at about 25 growth cycles.
doi:10.1063/1.2164417 fatcat:uk3yqlrqaraypnt4tzttrq7s6e