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Nucleation of atomic-layer-deposited HfO2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation
2006
Applied Physics Letters
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We report the results of grazing incidence small angle x-ray scattering experiments on the nucleation and growth of atomic layer deposited HfO 2 films. The scattering features are internal ͑porosity͒ and external ͑roughness͒ surfaces. Films grown on H-terminated Si exhibit greater scattering than films grown on chemically oxidized Si. The films grown on H-terminated Si may be as much as 50% porous. Characteristic scattering feature sizes are those of the film nuclei, about 2 nm, which then
doi:10.1063/1.2164417
fatcat:uk3yqlrqaraypnt4tzttrq7s6e