Path Integral Simulations of Charged Multiexcitons in InGaAs/GaAs Quantum Dots

M. Harowitz
2005 AIP Conference Proceedings  
We give an introduction and brief overview of our path integral simulation technique for quantum dots. We have studied the effects of spectators on photoluminescence spectra in an applied electric field. The path integral simulations also allow us to directly simulate the charge profile of the exciton in an electric field, with full treatment of correlation and spectators. The dipole moment is negative (electron-over-hole) in all cases, even for a dot with uniform composition.
doi:10.1063/1.1994297 fatcat:jkphd35fdvd2fn32bqzmgb5bf4