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Microelectromechanical (MEMS) structures consisting of surface micromachined disk resonators of phosphorousdoped hydrogenated amorphous silicon (n-a-Si:H) deposited by radiofrequency plasma enhanced chemical vapour deposition (RF-PECVD) were fabricated and characterized. Quality factors up to 10 4 in vacuum were measured for disk resonators operating at frequencies between 0.1 and 10 MHz. The metallized structures were actuated with electrostatic force by radially placed electrodes. Finitedoi:10.1016/j.proeng.2011.12.377 fatcat:mxr24zzcnjbrxftf5xs7pj2m3i