Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction

Chih-Chiang Shen, Yun-Ting Lu, Yen-Wei Yeh, Cheng-Yuan Chen, Yu-Tzu Chen, Chin-Wei Sher, Po-Tsung Lee, Ya-Hsuan Shih, Tien-Chang Lu, Tingzhu Wu, Ching-Hsueh Chiu, Hao-Chung Kuo
2019 Crystals  
In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ
more » ... using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (Jth) from 12 to 8.5 kA/cm2, and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 °C) and high operation current (1.5 × Jth) test for over 500 h.
doi:10.3390/cryst9040187 fatcat:pirxdxpv4vb6xa56jt6q3eibqy