A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2019; you can also visit the original URL.
The file type is application/pdf.
Photoluminescence of porous silicon exposed to ambient air
1994
Applied Physics Letters
Preserved Fulltext
The room-temperature photoluminescence and structure were studied concerning porous silicon which was exposed to ambient air. Water vapor in ambient air gradually oxidized the surface of the porous silicon with developing Si--G-Si bonds. This room-temperature oxidation progressively replaced an unstable H-passivated surface with a more stable 0-passivated surface, dramatically increasing the intensity of the photoluminescence.
doi:10.1063/1.112047
fatcat:hdkxdaiz2fe6hfba45kcigt3bq