Fabrication of InP∕InAs∕InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy

Premila Mohan, Junichi Motohisa, Takashi Fukui
2006 Applied Physics Letters  
We report the growth of InP / InAs/ InP core-multishell nanowire arrays by selective area metalorganic vapor phase epitaxy. The core-multishell nanowires were designed to accommodate a strained InAs quantum well layer in a higher band gap InP nanowire. The precise control over nanowire growth direction and heterojunction formation enabled the successful fabrication of the nanostructure in which all three layers were epitaxially grown without the assistance of any catalyst. The grown nanowires
more » ... e grown nanowires were highly uniform, vertically oriented, and periodically aligned with controllable dimensions. 4 K photoluminescence measurements confirmed the formation of strained InAs quantum well on InP ͑110͒ sidewalls and the well widths corresponding to the photoluminescence peaks were in good agreement with calculated values.
doi:10.1063/1.2189203 fatcat:m4bevkrxbndz3jta6dyu2fhhla