Microstructure of SiOx:H Films prepared by plasma enhanced chemical vapor deposition

Ma Zhi-xun, Liao Xian-bo, Kong Guang-lin, Chu Jun-hao
2000 Chinese Physics  
The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (a-SiOx:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiOx:H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO 2 and HSi-O 3 . The Raman scattering results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts
more » ... icon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.
doi:10.1088/1009-1963/9/4/011 fatcat:txma76ly2vbmjjtbxrj64womva