A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2004; you can also visit the original URL.
The file type is application/pdf.
Effect of microstructure on excitonic luminescence of spontaneously ordered Ga0.52In0.48P alloys
1998
Journal of Applied Physics
Preserved Fulltext
We compare the results of low-temperature ͑4.2 K͒ microphotoluminescence ͑PL͒ measurements on cleaved edges of spontaneously ordered GaInP 2 alloy samples with the results of cross-section transmission electron microscopy ͑TEM͒. The TEM dark-field images show that the size of ordered domains grows as the deposition progresses. The excitonic luminescence peak in the micro-PL spectra of GaInP 2 is stronger near the surface of the thin film than near the substrate. From these results, we conclude
doi:10.1063/1.367371
fatcat:w5myudlwbrdnngxutvv2jrn4ci