A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2013; you can also visit the original URL.
The file type is application/pdf
.
A tunable X-band SiGe HBT single stage cascode LNA
2010
2010 10th Mediterranean Microwave Symposium
This paper presents an X-band silicon-germanium (SiGe) single stage cascode tunable low-noise amplifier (LNA) for active phased array transmit/receive modules. LNA is implemented by using IHP SiGe heterojunction bipolar transistors (HBTs) 0.25-µm SGB25V technology. Cadence is used in collaboration with ADS during schematic and layout design and the results depict that designed LNA dissipates 15.36 mW from an 2.4 V DC power supply and the maximum gain around 18 dB in X-band while not exceeding
doi:10.1109/mmw.2010.5605144
fatcat:r2z7qrgqhffcve2ruyhlo6yanq