A tunable X-band SiGe HBT single stage cascode LNA

Mustafa Dogan, Ibrahim Tekin
2010 2010 10th Mediterranean Microwave Symposium  
This paper presents an X-band silicon-germanium (SiGe) single stage cascode tunable low-noise amplifier (LNA) for active phased array transmit/receive modules. LNA is implemented by using IHP SiGe heterojunction bipolar transistors (HBTs) 0.25-µm SGB25V technology. Cadence is used in collaboration with ADS during schematic and layout design and the results depict that designed LNA dissipates 15.36 mW from an 2.4 V DC power supply and the maximum gain around 18 dB in X-band while not exceeding
more » ... e 2.4 dB noise figure (NF). Reverse gain of the LNA is very low (<-40 dB). Input terminal is matched so that S 11 is below -10 dB in X-band. Keywords-Low-noise amplifier (LNA); silicon-germanium (SiGe); heterojunction bipolar transistor (HBT); noise figure (NF); X-band. I.
doi:10.1109/mmw.2010.5605144 fatcat:r2z7qrgqhffcve2ruyhlo6yanq