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Physical Review B
It was recently found that ReSi 1.75 based semiconductor single crystals can be of either p or n type with a fixed composition, just depending on their different crystal orientations. To investigate the mechanism of this interesting phenomenon, we grow ReGe x Si 1.75−x ͑x = 0.02 and 0.04͒ single crystals with a floating zone method with radiation heating. The Seebeck coefficient and electric resistivity of these samples are measured along ͓100͔ and ͓001͔, respectively. The conduction mechanismdoi:10.1103/physrevb.71.113201 fatcat:3yu2o54zcrh3hm6pa4n4elwuay