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Rapid thermal chemical vapor deposition of in-situ nitrogen-doped poly-silicon for dual gate CMOS
1995 Symposium on VLSI Technology. Digest of Technical Papers
A novel gate structure with excellent electrical properties and reliability has been fabricated by in-situ rapid thermal multiprocessing. Gate oxide was grown first by low pressure rapid thermal oxidation in N,O, followed by sequential rapid thermal chemical vapor deposition (RTCVD) of an ultrathin layer (6nm) of nitrogen-doped polysilicon and then undoped polysilicon. Results show the suppression of boron penetration and high device reliability.
doi:10.1109/vlsit.1995.520887
fatcat:zmlm46do4zh7rngjodzvftawmq