Ballistic Transport and Large Spin Hall Effect in a Silicene MOSFET

Maxwell N. Fishman
In an effort to surmount the issues that arise when attempting to scale transistors down to the low nanometer regime, the use of two-dimensional materials in transistors is regarded as a possible solution. One such material, silicene, has garnered much attention recently due to its unique properties and compatibility with current silicon-based technology. Silicene is a silicon analog of graphene in which a monolayer of silicon atoms forms a honeycomb structure. Therefore, silicene contains many
more » ... of the properties of graphene. However, due to it's
doi:10.7298/x4vx0djg fatcat:vix5zs7kdrarxjxnf2pgh6ysze