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A simulation technique is described for the calculation of semiconductor electrode properties at steady state, e.g., at equilibrium in the dark or under constant illumination. Integration of the continuity equation with respect to distance at the steady state yields a relation between the light flux and free carriers, which can be used in a recursion relation to determine the free carrier concentrations and the electric field within the space charge region of the semiconductor electrode. Thedoi:10.1149/1.2132705 fatcat:ape2kpwipzdgboykhg6fu5mp5u