Internet Archive Scholar

Simulation and Analysis of III V Characteristic and Bandgap Design for Heterojunction Laser Diode

Thu Rein Ye Yint Win, Tin Tin Hla
2019 Zenodo  

Preserved Fulltext

fulltext thumbnail
Web Archive Capture PDF (810.1 kB)
https://web.archive.org/web/20200124014919/https://zenodo.org/record/3590489/files/191%20Simulation%20and%20Analysis%20of%20III-V%20Characteristic%20and%20Bandgap%20Design%20for%20Heterojunction%20Laser%20Diode.pdf

A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2020; you can also visit the original URL. The file type is application/pdf.

This research is the analysis of computer based simulation design for the semiconductor laser diode. The paper is emphasized by analyzing the band structure and voltage current characteristics of AlGaAs GaAs for the laser diode. In this paper, bandgap variation temperature dependence, voltage current V I , band diagram of the p n junction for laser diode are discussed briefly. On the other hand, this paper is emphasized band structure design and voltage current calculation using the
more » ... model. The AlGaAs GaAs device technology is used for high speed optical communication. Thu Rein Ye Yint Win | Tin Tin Hla "Simulation and Analysis of III-V Characteristic and Bandgap Design for Heterojunction Laser Diode" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-3 | Issue-5 , August 2019, URL: https://www.ijtsrd.com/papers/ijtsrd26542.pdf
doi:10.5281/zenodo.3590489 fatcat:jbcq5qepcjdrzlytvhcoxci3ku
Open Access
Citation

Thu Rein Ye Yint Win, Tin Tin Hla. "Simulation and Analysis of III V Characteristic and Bandgap Design for Heterojunction Laser Diode." Zenodo (2019)