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Electronic structure of oxidized Ni/Au contacts on p-GaN investigated by x-ray absorption spectroscopy
2001
Applied Physics Letters
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X-ray absorption spectroscopy has been used to investigate the electronic structure of as-deposited and oxidized Ni/Au contacts on p-GaN. The Ni K-, L 2,3 -, and O K-edges x-ray absorption spectra clearly show the formation of NiO in the annealed contacts. Annealing in air increases Ni-site hole concentration and slightly shortens the nearest-neighbor Ni-O bond length, which enhances p -d hybridization and charge transfer from Ni to O. The observed very low specific contact resistance in the
doi:10.1063/1.1370121
fatcat:roi4efii2zbudpsyudofwkrcky