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Automation of Model Parameter Estimation for Random Telegraph Noise
2014
IEICE Transactions on Fundamentals of Electronics Communications and Computer Sciences
The modeling of random telegraph noise (RTN) of MOS transistors is becoming increasingly important. In this paper, a novel method is proposed for realizing automated estimation of two important RTN-model parameters: the number of interface-states and corresponding threshold voltage shift. The proposed method utilizes a Gaussian mixture model (GMM) to represent the voltage distributions, and estimates their parameters using the expectation-maximization (EM) algorithm. Using information criteria,
doi:10.1587/transfun.e97.a.2383
fatcat:arjaapxzizc6zbdklpokhna6p4