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It is quite clear from a wide range of experiments that gating phenomena of ion channels is inherently stochastic. It has been discussed using BD simulations in a recent paper that memory effects in ion transport is negligible, unless the barrier height is high. In this brief report we like to state using Differential Stochastic Methods (DSM's) that the Markovian property of exponential dwell times do indeed give rise to a high barrier, which in turn indicates that memory effects need not bearXiv:0801.3764v1 fatcat:y5gpxeslkzf6pm65glq5v3auoa