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Monolayer iron germanium telluride Fe₃GeTe₂, one of the typical two-dimensional ferromagnetic materials, hitherto, has only been studied by exfoliated micron-sized samples. We achieve high-quality wafer-scale growth of thin Fe₃GeTe₂ films by molecular beam epitaxy, greatly expanding the types of characterization tools employable and providing the possibility for its integration in devices like consumer electronics. Thickness-dependent transport measurements are used to characterize and probedoi:10.14288/1.0397001 fatcat:vh72qhbdubfdxhfafyxeofwtl4