Development of multiband phase shifters in 180-nm RF CMOS technology with active loss compensation

Chao Lu, A.-V.H. Pham, D. Livezey
2006 IEEE transactions on microwave theory and techniques  
We present the design and development of a novel integrated multiband phase shifter that has an embedded distributed amplifier for loss compensation in 0.18-m RF CMOS technology. The phase shifter achieves a measured 180 phase tuning range in a 2.4-GHz band and a measured 360 phase tuning range in both 3.5-and 5.8-GHz bands. The gain in the 2.4-GHz band varies from 0.14 to 6.6 dB during phase tuning. The insertion loss varies from 3.7 dB to 5.4-dB gain and 4.5 dB to 2.1-dB gain in the 3.5-and
more » ... in in the 3.5-and 5.8-GHz bands, respectively. The gain variation can be calibrated by adaptively tuning the bias condition of the embedded amplifier to yield a flat gain during phase tuning. The return loss is less than 10 dB at all conditions. The chip size is 1200 m 2300 m including pads. Index Terms-CMOS analog integrated circuits (ICs), distributed amplifiers, phase shifters, phased arrays.
doi:10.1109/tmtt.2005.860892 fatcat:jdaftrm3qzfd7ni4o7nn6jiuyq