Analysis of strain relaxation and emission spectrum of a free-standing GaN-based nanopillar

Yuh-Renn Wu, Peichen Yu, C. H. Chiu, Cheng-Yu Chang, H. C. Kuo, Ian T. Ferguson, Tsunemasa Taguchi, Ian E. Ashdown, Seong-Ju Park
2008 Eighth International Conference on Solid State Lighting  
We have made a GaN-based single nanopillar with a diameter of 300nm using the focused ion beam (FIB) technique. The micro-photoluminescence (µ-PL) from the embedded GaN/InGaN multi-quantum wells reveals a blue shift of 68.3 meV in energy. In order to explain the spectrum shift, we have developed a valence force field model to study the strain relaxation mechanism in a single GaN-based nanopillar structure. The strain distribution and strain induced polarization effect inside the multiple
more » ... the multiple quantum wells is added to our self-consistent Poisson, drift-diffusion, and Schrodinger solver to study the spectrum shift of µ-PL.
doi:10.1117/12.800658 fatcat:t73qfmrtwvctzdyib46hoq5fqm