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Proceedings of International Conference on Microelectronics
This paper describes the modelling and simulation of two resolution enhancement techniques in lithography ; 1) phase shift mask (PSM) technology and 2) top surface imaging (TSI) with silylation and dry development. The effect of the duty ratio on the image contrast is computed. Simulated one and two dimensional rim shifters and attenuated PSMs are presented. The effect of the aerial image on the silylation profile for the top imaging processes, DESIRE and PRIME, is also presented. The effect ofdoi:10.1109/icmel.1995.500886 fatcat:n2oe54luezg6piicwxqqn7tnau