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Nonvolatile Memory by All-Around-Gate Junctionless Transistor Composed of Silicon Nanowire on Bulk Substrate
2011
IEEE Electron Device Letters
A junctionless transistor with a width of 10 nm and a length of 50 nm is demonstrated for the first time. A silicon nanowire (SiNW) channel is completely surrounded by a gate, and the SiNW is built onto the bulk substrate. The proposed junctionless transistor is applied to a Flash memory device composed of oxide/nitride/oxide gate dielectrics. Acceptable memory characteristics are achieved regarding the endurance, data retention, and dc performance of the device. It can be expected that the
doi:10.1109/led.2011.2118734
fatcat:xghnl656ujcurdxgntqvt47jca