Nonvolatile Memory by All-Around-Gate Junctionless Transistor Composed of Silicon Nanowire on Bulk Substrate

Sung-Jin Choi, Dong-Il Moon, Sungho Kim, Jae-Hyuk Ahn, Jin-Seong Lee, Jee-Yeon Kim, Yang-Kyu Choi
2011 IEEE Electron Device Letters  
A junctionless transistor with a width of 10 nm and a length of 50 nm is demonstrated for the first time. A silicon nanowire (SiNW) channel is completely surrounded by a gate, and the SiNW is built onto the bulk substrate. The proposed junctionless transistor is applied to a Flash memory device composed of oxide/nitride/oxide gate dielectrics. Acceptable memory characteristics are achieved regarding the endurance, data retention, and dc performance of the device. It can be expected that the
more » ... rent advantages of the junctionless transistor can overcome the scaling limitations in Flash memory. Hence, the junctionless transistor is a strong candidate for the further scaling of NAND Flash memory below the 20-nm node. Index Terms-All-around gate (AAG), Bosch process, bulk substrate, Flash memory, junctionless, junctionless field-effect transistor (FET), junctionless transistor, nanowire, silicon nanowire (SiNW), SONOS.
doi:10.1109/led.2011.2118734 fatcat:xghnl656ujcurdxgntqvt47jca