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Inactivity Windows in Irradiated CMOS Analog Switches
2006
IEEE Transactions on Nuclear Science
AbstractRadiation tests have shown the existence of inactivity windows in analog switches. It means that the devices lose their ability to switch between ON and OFF states if the total radiation dose is placed between two characteristic values. Once the total ra-diation dose goes beyond the top value of the window, the switching ability reappears. A physical mechanism based on the evolution of the threshold voltage of irradiated NMOS transistors is proposed in this paper. Finally, consequences
doi:10.1109/tns.2006.880474
fatcat:zxuhj26zrrgfdel7nleaikug4e