Electric-field tuning of the metal-insulator transition in ultrathin films of LaNiO3

R. Scherwitzl, P. Zubko, C. Lichtensteiger, J.-M. Triscone
2009 Applied Physics Letters  
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more » ... ly p-type GaN Appl. Phys. Lett. 101, 082106 (2012) Anderson localization in strongly coupled gold-nanoparticle assemblies near the metal-insulator transition Appl. Phys. Lett. 101, 083105 (2012) Additional information on Appl. Phys. Lett. Epitaxial ultrathin films of the metallic perovskite LaNiO 3 were grown on ͑001͒ SrTiO 3 substrates using off-axis rf magnetron sputtering. The film structure was characterized and their electrical properties investigated. Films thinner than 8 unit cells display a metal-insulator transition at a thickness dependent characteristic temperature. Hall measurements revealed p-type conduction, which was confirmed by electric field-effect experiments. Large changes in the transport properties and the metal-insulator transition temperature were observed for the thinnest LaNiO 3 films as the carrier density was electrostatically tuned.
doi:10.1063/1.3269591 fatcat:ns4gzxky75cz7ds7t3anjonlom