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Thermal activation of As implanted in bulk Si and separation by implanted oxygen
2004
Journal of Applied Physics
We have studied arsenic (As) diffusion and its electrical activation in two different types of silicon substrates: bulk Si and separation by implanted oxygen (SIMOX) wafers. Both substrates were implanted with a dose of 5 ϫ 10 14 cm −2 As + at 20 keV. The samples were annealed and physical characterization was performed with secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry, and medium energy ion scattering. The electrical properties of the film were extracted by
doi:10.1063/1.1776319
fatcat:ocxs23fdhzcebkse7b3v4uf63a