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Efficient Current Injection Into Single Quantum Dots Through Oxide-Confined p-n-Diodes
2022
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Current injection into single quantum dots embedded in vertical p-n-diodes featuring oxide apertures is analyzed in the low-injection regime suitable for single-photon emitters. The experimental and theoretical evidence is found for a rapid lateral spreading of the carriers after passing the oxide aperture in the conventional p-i-n-design. By an alternative design employing p-doping up to the oxide aperture, the current spreading can be suppressed resulting in an enhanced current confinement
doi:10.34657/8163
fatcat:jzhe6wgbibgndlrji57dp6xqt4