Bendable GaN high electron mobility transistors on plastic substrates

Keon Jae Lee, Matthew A. Meitl, Jong-Hyun Ahn, John A. Rogers, Ralph G. Nuzzo, Vipan Kumar, Ilesanmi Adesida
<span title="2006-12-15">2006</span> <i title="AIP Publishing"> <a target="_blank" rel="noopener" href="" style="color: black;">Journal of Applied Physics</a> </i> &nbsp;
A procedure for fabricating flexible forms of high electron mobility transistors ͑HEMTs͒ supported on plastic substrates is described. The process uses a combination of conventional top-down, wafer scale fabrication protocols to define a printable form of ultrathin, device quality multilayer AlGaN / GaN single crystalline microstructures-a so-called microstructured semiconductor inkand soft-lithographic printing methods to effect their registered transfer to a plastic substrate. These
more &raquo; ... yield high performance, bendable HEMT arrays that are mechanically durable-ones with effective transconductances exceeding nearly all reported forms of printed thin-film transistors.
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="">doi:10.1063/1.2349837</a> <a target="_blank" rel="external noopener" href="">fatcat:enyirmearrbmjj3n43hgbzyke4</a> </span>
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