Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate

J. R. Gao, M. Hajenius, F. D. Tichelaar, T. M. Klapwijk, B. Voronov, E. Grishin, G. Gol'tsman, C. A. Zorman, M. Mehregany
2007 Applied Physics Letters  
The authors have realized NbN ͑100͒ nanofilms on a 3C-SiC ͑100͒/Si͑100͒ substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy ͑HRTEM͒ is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4 to 4.1 nm shows a superconducting transition temperature of 11.8 K, which is the highest reported for NbN films of comparable thickness. The NbN
more » ... s on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.
doi:10.1063/1.2766963 fatcat:wactfgt3wfevzdtqzuxevgbirq