A novel enhanced electric-field impact-ionization MOS (E2I-MOS) is proposed, which achieves a subthreshold swing of as low as 6 mV/dec at room temperature while reducing the breakdown voltage by about 1.8 V. The E2I-MOS exhibits ≥ 10× lower OFF-state leakage compared to previously reported I-MOS structures, thus reducing the power consumption and also making the device more scalable. A very high ON current of the order of 1 mA/μm can be obtained. Additionally, the device reliability is expected

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... ability is expected to be improved by confining hot carrier generation away from the gate dielectric region. Index Terms-Band-to-band tunneling, breakdown voltage, I-MOS, impact ionization, subthreshold slope.