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A Novel Enhanced Electric-Field Impact-Ionization MOS Transistor
2010
IEEE Electron Device Letters
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A novel enhanced electric-field impact-ionization MOS (E2I-MOS) is proposed, which achieves a subthreshold swing of as low as 6 mV/dec at room temperature while reducing the breakdown voltage by about 1.8 V. The E2I-MOS exhibits ≥ 10× lower OFF-state leakage compared to previously reported I-MOS structures, thus reducing the power consumption and also making the device more scalable. A very high ON current of the order of 1 mA/μm can be obtained. Additionally, the device reliability is expected
doi:10.1109/led.2010.2066541
fatcat:2bxr6huotzhuncgboqvjnneote