Pixellated perovskite photodiode on IGZO thin film transistor backplane for low dose indirect X-ray detection

Taoyu Zou, Ben Xiang, Yangbing Xu, Ya Wang, Chuan Liu, Jun Chen, Kai Wang, Qing Dai, Shengdong Zhang, Yong-Young Noh, Hang Zhou
2020 IEEE Journal of the Electron Devices Society  
The integration of perovskite photodetectors with thin-film transistor (TFT) backplane or complementary metal-oxide-semiconductor CMOS circuit is a key step towards prototyping perovskitebased image sensors. Here, we demonstrate a pixel configuration for indirect X-ray detection comprising of IGZO TFTs and perovskite photodiodes (PDs). The perovskite photodiode is patterned by a twostep deposition method. Our integrated TFT/PD pixel shows a weak light detection capability down to 4 nW cm −2 ,
more » ... n to 4 nW cm −2 , and a fast-transient response to the pulse light and gate switching. Combining with a CsI scintillator, the integrated pixel achieves a specific X-ray sensitivity of 8.2 × 10 2 μC mGy −1 air cm −3 . Theoretically, with a state-of-the-art scintillator, the new pixel can provide a detectable signal for X-ray imaging at a dose rate as low as 10 μGy air s −1 . This work provides an advanced pixel design for high resolution, high sensitivity, and high frame-rate flat-panel imager. INDEX TERMS Flat-panel imager, IGZO, perovskite, thin-film transistors, X-ray detectors.
doi:10.1109/jeds.2020.3040771 fatcat:zqjgixfzfzacbayzk77msmgzda