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A spline large-signal FET model based on bias-dependent pulsed I-V measurement
2002
IEEE transactions on microwave theory and techniques
A spline large-signal FET model is presented. This includes a quiescent bias dependency to predict nonlinear dynamic behavior of FETs in which self-heating and trap effects are present. The intrinsic device of the model represented by a parallel connection of current and charge sources and the model parameters are extracted from bias-dependent pulsed I-Vs and -parameters, respectively. The validity of the model is demonstrated by comparing the simulated small-signal -parameters over a wide bias
doi:10.1109/tmtt.2002.804509
fatcat:fttidomwj5enjgag3ssr4tsmjy