A spline large-signal FET model based on bias-dependent pulsed I-V measurement

Kyoungmin Koh, Hyun-Min Park, Songcheol Hong
2002 IEEE transactions on microwave theory and techniques  
A spline large-signal FET model is presented. This includes a quiescent bias dependency to predict nonlinear dynamic behavior of FETs in which self-heating and trap effects are present. The intrinsic device of the model represented by a parallel connection of current and charge sources and the model parameters are extracted from bias-dependent pulsed I-Vs and -parameters, respectively. The validity of the model is demonstrated by comparing the simulated small-signal -parameters over a wide bias
more » ... range with measured data. Nonlinear behaviors of FETs such as in out , third-order intermodulation distortion, and efficiency are also compared. Index Terms-GaAs MESFET, large-signal model, nonquasi-static model, pulsed I-V, self-heating effects, spline, table-based model, trap effects.
doi:10.1109/tmtt.2002.804509 fatcat:fttidomwj5enjgag3ssr4tsmjy