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It is shown that ultrathin, highly ordered, continuous films of cerium dioxide may be prepared on silicon following substrate prepassivation using an atomic layer of chlorine. The as-deposited, few-nanometer-thin Ce 2 O 3 film may very effectively be converted at room temperature to almost fully oxidized CeO 2 by simple exposure to air, as demonstrated by hard X-ray photoemission spectroscopy and X-ray diffraction. This post-oxidation process essentially results in a negligible loss in filmdoi:10.1063/1.4870585 fatcat:zrd7m74x2rew3npexycurgxxyq