Ultrathin, epitaxial cerium dioxide on silicon

Jan Ingo Flege, Björn Kaemena, Jan Höcker, Florian Bertram, Joachim Wollschläger, Thomas Schmidt, Jens Falta
2014 Applied Physics Letters  
It is shown that ultrathin, highly ordered, continuous films of cerium dioxide may be prepared on silicon following substrate prepassivation using an atomic layer of chlorine. The as-deposited, few-nanometer-thin Ce 2 O 3 film may very effectively be converted at room temperature to almost fully oxidized CeO 2 by simple exposure to air, as demonstrated by hard X-ray photoemission spectroscopy and X-ray diffraction. This post-oxidation process essentially results in a negligible loss in film
more » ... tallinity and interface abruptness. V C 2014 AIP Publishing LLC.
doi:10.1063/1.4870585 fatcat:zrd7m74x2rew3npexycurgxxyq