Reduction of chemical usage in semiconductor manufacturing has been discussed in recent years. In particular, the impact of global warming has been the focus of intense speculation. The low efficiency of chemicals leads to undesirable side effects. The aims of this study are to optimize plasma efficiency as chemical reactions using Taguchi method. In short, the plasma cleaning function is that residual oxidized film (SiO2) inside the chamber reacts with C2 F6, and it discharges the results of

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... e reaction in the form of SiF4 and CO. The main point of optimization was to use F to increase the amount of desirable main reaction SiF4 and decrease the amount of unreacted C2F6 in order to keep the undesirable side reaction to a minimum. As the results, we found the CVD cleaning condition that improves plasma efficiency to 2 times, PFC gas usage to one third, PFC gas emission to one forth.