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Efficiency droop in AlGaInP and GaInN light-emitting diodes
2012
Applied Physics Letters
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At room temperature, AlGaInP pn-junction light-emitting diodes (LEDs) emitting at 630 nm do not exhibit an efficiency droop. However, upon cooling the AlGaInP LEDs to cryogenic temperatures, they show a pronounced efficiency droop. We attribute the efficiency droop in AlGaInP LEDs to electron-drift-induced reduction in injection efficiency (i.e., carrier leakage out of the active region) mediated by the asymmetry of the pn junction, specifically the disparity between electron and hole
doi:10.1063/1.3694044
fatcat:v7x2fg5doncpljfkah43swlvou