A methodology for deep sub-0.25 μm CMOS technology prediction

V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr
2001 IEEE Transactions on Electron Devices  
We present a novel methodology for characterization of sub-quartermicron CMOS technologies. It involves process calibration, device calibration employing two-dimensional device simulation and automated Technology Computer Aided Design (TCAD) optimization and, finally, transient mixed-mode device/circuit simulation. The proposed methodology was tested on 0.25 m technology and applied to 0.13 m technology in order to estimate ring oscillator speed. The simulation results show an excellent
more » ... n excellent agreement with available experimental data.
doi:10.1109/16.954473 fatcat:h6owpg4mkfe6rlbccjnmppan2a