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Study of spectral dependences of absorption coefficient at the region of absorption by free carriers shows that the introduction of radiation defects in n-GaP crystals leads to the appearance of additional scattering besides of traditional ones. A new scattering mechanism on "frozen" phonons (deformation localized near the radiation defects) is suggested and its behavior in experimental and theoretical aspects taking into account Х 1с -Х 3с transitions at the scattering process has beendoi:10.4236/jmp.2015.613199 fatcat:i3jqk5tutrctte2z7dwcnd5kie