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Synthesis, Structure and Thermal Properties of Volatile Group 11 Triazenides as Potential Precursors for Vapor Deposition
[post]
2022
unpublished
Group 11 thin films are desirable as interconnects in microelectronics. Although many M–N bonded Cu precursors have been explored for vapor deposition, there is currently a lack of suitable Ag and Au derivatives. Herein, we present monovalent Cu, Ag and Au 1,3-di-tert-butyltriazenides that have potential for use in vapor deposition. These compounds possess thermal stability and volatility that rival that of current state-of-the-art group 11 precursors with bidentate M–N bonded ligands. All
doi:10.26434/chemrxiv-2022-33s1j
fatcat:qx7tmfn5hbg23c5e5s262hn5zi