Hole spin polarization inGa1−xAlxAs:Mnstructures

A. Ghazali, I. C. da Cunha Lima, M. A. Boselli
2001 Physical Review B (Condensed Matter)  
A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations. Available experimental results are compared with theory.
doi:10.1103/physrevb.63.153305 fatcat:37rde3eutffublbm4qmqdqx264