Quantitative evaluation of boron-induced disorder in multilayers containing silicon nanocrystals in an oxide matrix designed for photovoltaic applications

G. Zatryb, A. Podhorodecki, X. J. Hao, J. Misiewicz, Y. S. Shen, M. A. Green
2010 Optics Express  
The effect of doping by boron on optical properties of multilayers containing Si-NCs were studied by means of photoluminescence (PL), timeresolved PL, photoluminescence excitation (PLE), transmission and reflection measurements. It was found that PL decay is strongly non-single exponential and can be described by means of Laplace transform of lognormal decay rates distribution. It was also proposed that changes observed in the distribution central moments reflect the disorder induced by borondoping.
more » ... induced by borondoping.
doi:10.1364/oe.18.022004 pmid:20941101 fatcat:b3z7w7ejpzas3dzq4yuvjqevvi