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Preparation and evaluation of Ga2O3 films for oxygen sensors

Masaaki Isai, Takahiro Yamamoto, Takuma Torii
2014 Transactions of the Materials Research Society of Japan  

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The β-Ga 2 O 3 films for oxygen (O 2 ) gas sensors were prepared by the RF magnetron sputtering method. The effect of annealing time on the oxygen detection properties was evaluated. The films were annealed at 1000℃ with varying the annealing time from 2 to10h. It was found that sensing properties did not depend on the annealing time. The annealing temperature of 1000℃ is not high enough to vary the sensing properties. It means that Ga 2 O 3 films are stable and long life for high temperature
more » ... plications, for example O 2 gas sensors. The influence of the two kinds of substrates, namely Si (100) and quartz (SiO 2 ) on the oxygen detection properties was evaluated. It was found that the oxygen gas sensor fabricated on a quartz substrate had shorter response time than that on a Si substrate.
doi:10.14723/tmrsj.39.305 fatcat:xiafcpaqqrhafhaazsckcdujy4
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Masaaki Isai, Takahiro Yamamoto, Takuma Torii. "Preparation and evaluation of Ga2O3 films for oxygen sensors." Transactions of the Materials Research Society of Japan 39.3 (2014) 305-308