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Physical Review B
Temperature dependent thermopower and Hall effect measurements, combined with model calculations including all of the relevant elastic and inelastic scattering mechanisms, are used to quantify the role of charged line defects on electron transport in n-type InN films grown by molecular beam epitaxy. Films with electron concentrations between 4 × 10 17 to 5 × 10 19 cm −3 were investigated. Charged point and line defect scattering produce qualitatively different temperature dependences of thedoi:10.1103/physrevb.84.075315 fatcat:rlzn6dcj75eurorghvnj7c4yx4