Angle-resolved photoemission study ofGa1−xMnxAs

J. Okabayashi, A. Kimura, O. Rader, T. Mizokawa, A. Fujimori, T. Hayashi, M. Tanaka
2001 Physical Review B (Condensed Matter)  
Valence-band dispersions in Ga 1Ϫx Mn x As along the ⌫-⌬-X line (kʈ͓001͔) are obtained by angle-resolved photoemission spectroscopy. Compared with the spectra of GaAs, a small energy shift caused by Mn doping is observed for one of the valence bands. In addition, states are observed near the Fermi level in Ga 1Ϫx Mn x As. These states show no clear dispersions and behave like an impurity band induced by Mn doping.
doi:10.1103/physrevb.64.125304 fatcat:p6elxcbp6ratte7ubl3e6hm6ve