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Valence-band dispersions in Ga 1Ϫx Mn x As along the ⌫-⌬-X line (kʈ͓001͔) are obtained by angle-resolved photoemission spectroscopy. Compared with the spectra of GaAs, a small energy shift caused by Mn doping is observed for one of the valence bands. In addition, states are observed near the Fermi level in Ga 1Ϫx Mn x As. These states show no clear dispersions and behave like an impurity band induced by Mn doping.doi:10.1103/physrevb.64.125304 fatcat:p6elxcbp6ratte7ubl3e6hm6ve