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Perspectives of UTBB FD SOI MOSFETs for Analog and RF Applications
[chapter]
2014
Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting
Ultra-thin body and buried oxide (UTBB) fully depleted (FD) siliconon-insulator (SOI) MOSFETs are widely recognized as a promising candidate for 20 nm technology node and beyond, due to outstanding electrostatic control of short channel effects (SCE). Introduction of a highly-doped layer underneath thin buried oxide (BOX), so called ground-plane (GP), targets suppression of detrimental parasitic substrate coupling and opens multi-threshold voltage (V Th ) and dynamic-V Th opportunities within
doi:10.1007/978-3-319-08804-4_2
fatcat:tyfbvqltpjdvdixkl6mu2a4tqi