Magnetoresistance of n-GaAs at filamentary current flow

S A Proshin, V G Golubev, S Wurfl, J Spangler, A Schilz, W Prettl
1993 Semiconductor Science and Technology  
A large number of sharp structures are observed in the 4.2 K magnetoresistance of n-GaAs biased above impurity breakdown in a regime where current flow is filamentary. Most of the structures cannot be attributed to spectral properties of the semiconductor such as impact excitation of shallow donors or the magnetoimpurity effect. Experimental results give evidence that these structures are caused by a redistribution of the filamentary current flow when one filament border is swept across an imperfection in the material.
doi:10.1088/0268-1242/8/7/018 fatcat:7bw5zurtbra2fj5qugij7g56lq