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A transistor screening procedure using leakage current measurements
Journal of Research of the National Bureau of Standards Section C Engineering and Instrumentation
A stud y of the agin g behavi or of low-power germa nium alloy switc hing tra ns istors has revealed a rela tions hi p between s mall c han ges in junction leakage c urrent, induced by a bri ef agin g stress, a nd late r de te ri ora ti o n in pe rform a nce. This relations hip may provide the bas is for a nond es t ru ctiv e scree ning procedure whic h would se rve to ide ntify ge rmanium alloy t~a n s i s tors likel y to de teriorate through excessive growth of juncti on le akage c urre nt.doi:10.6028/jres.069c.037 fatcat:olor5ieb4zfgrif3i7vmiaqf5u