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We investigated numerically IV-characteristics and power of emission from stacks with various quantities of long Josephson junctions (up to 6 junctions) which interacted inductively with each other. Parameters of junctions were chosen close to those for MoRe-Si(W)-MoRe heterostructures. We set Gaussian spread of about 0.01% of critical currents along junctions. Electrical properties of a stack consisted of three junctions was investigated in details. Zero-fi eld steps at voltages correspondingdoi:10.26565/2222-5617-2018-29-02 fatcat:mkk3gici2rfe7lcbcbto7eydja