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Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs
2012
Applied Sciences
This paper reports significant improvements in the electrical performance of In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect transistors (MOSFET) by a post-gate CF 4 /O 2 plasma treatment. The optimum condition of CF 4 /O 2 plasma treatment has been systematically studied and found to be 30 W for 3-5 min. Approximately 5× reduction in interface trap density from 2.8 × 10 12 to 4.9 × 10 11 cm −2 eV −1 has been demonstrated with fluorine (F) incorporation. Subthreshold swing has been
doi:10.3390/app2010233
fatcat:tp2qvqh7kjbn3fca6ds2jfdcii