An Extraction Method of the Energy Distribution of Interface Traps by an Optically Assisted Charge Pumping Technique
IEEE Transactions on Electron Devices
The energy distribution of interface traps is extracted using an optically assisted charge pumping (optical CP) technique. Optically generated majority carriers through light illumination enable the CP process even in a floating-body (FB) device without an extra body contact. With the use of square pulses at different rising and falling times and the proposed analytical model, the energy distribution of the interface traps is investigated via an optical CP technique. The optical CP technique is
... cal CP technique is useful to extract the energy distribution of interface traps, as well as the interfacetrap density in nanoscale FB devices. The data extracted by the optical CP is verified in a comparison with the data extracted by subthreshold-slope techniques. Index Terms-Charge pumping (CP), floating-body (FB), interface trap, silicon-on-insulator metal-oxide-semiconductor fieldeffect transistor (SOI MOSFET), trap energy level. he was a Process Integration Engineer with Hynix Semiconductor, Inc., Kyungki, Korea, where he developed 4-, 16-, 64-, and 256-M dynamic random-access memory devices. He is currently an Associate Professor with the Division of Electrical Engineering, School of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, Daejeon, Korea. He has authored or coauthored over 130 papers and is the holder of seven U.S. patents and 100 Korean patents. His research interests are multiplegate metal-oxide-semiconductor (MOS) field-effect transistors, exploratory devices, novel and unified memory devices, nanofabrication technologies for bioelectronics, and nanobiosensors. He has also worked on reliability physics and quantum phenomena for nanoscale complementary MOS.